Publications



Journals
2011-Present 1 Z. Xiao, J. Hamblin, Shashi Poddar, Stephen Ducharme, P. Paruch, and X. Hong, “Effect of thermal annealing on ferroelectric domain structures in poly(vinylidenefluoride-
trifluorethylene) Langmuir-Blodgett thin films”, J. Appl. Phys. 116, 066819 (2014). [Link]
  2 V. R. Singh, L. Zhang, A. K. Rajapitamahuni, N. Devries and X. Hong, “Nonlinear transport in nanoscale phase separated colossal magnetoresistive oxide thin films”, J. Appl. Phys. 116, 033914 (2014). [Link]
  3 A. Rajapitamahuni, Jason Hoffman, Charles Ahn, and X. Hong, “Examining GrapheneField Effect Sensors for Ferroelectric Thin Film Studies”, Nano. Lett. 13, 4374 (2013). [Link]
  4 Z. Xiao, S. Poddar, S. Ducharme, and X. Hong, “Domain wall roughness and creep in nanoscale crystalline ferroelectric polymer”, Appl. Phys. Lett., 103, 112903 (2013).[Link]
5 X. Hong, K. Zou, A. M. DaSilva, C. H. Ahn, and J. Zhu, “Integrating Functional Oxides with Graphene (invited review)”, Solid State Commun. 152, 1365 (2012). [Link]
  6 P. Paruch, A. B. Kolton, X. Hong, C. H. Ahn, and T. Giamarchi, “Thermal quench effects on ferroelectric domain walls”, Phys. Rev. B 85, 214115 (2012). [Link]
  7 X. Hong, K. Zou, B. Wang, S.-H. Cheng, and J. Zhu, “Evidence for spin-flip scattering and local moments in dilute fluorinated graphene”, Phys. Rev. Lett. 108, 226602 (2012). [Link]
  8 K. Zou, X. Hong, and J. Zhu, "Electron-electron interaction and electron-hole asymmetry in bilayer graphene", Phys. Rev. B 84, 085408 (2011). [Link]
  9 J. Hoffman, X. Hong, and C.H. Ahn, "Device performance of ferroelectric/correlated oxide heterostructures for non-volatile memory applications", Nanotechnology 22, 254014 (2011). [Link]
  10 X. Hong, S.-H. Cheng, C. Herding, and J. Zhu, "Colossal negative magnetoresistance in dilute fluorinated graphene", Phys. Rev. B 83, 085410 (2011). [Link]
2006-2010 1 K. Zou, X. Hong, D. Keefer, and J. Zhu, "Deposition of high-quality HfO_2 on graphene and the effect of remote substrate phonon scattering", Phys. Rev. Lett. 105, 126601 (2010). [link]
  2 X. Hong, J. Hoffman, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu, "Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3", Appl. Phys. Lett. 97, 033114 (2010). [Link]
  3 X. Hong, K. Zou, and J. Zhu, "Quantum scattering time and its implications on scattering sources in graphene", Phys. Rev. B 80, 241415 (Rapid Communications) (2009). [Link] Appeared in Virtual Journal of Nanoscale Science & Technology (Jan. 18, 2010 issue) and Virtue Journal of Ultrafast Science (Jan. 2010 issue).
  4 N. Naftalis, Y. Bason, J. Hoffman, X. Hong, C. H. Ahn, and L. Klein, "Anisotropic magnetoresistance and planar Hall effect in epitaxial films of La_{0.7}Ca_{0.3}MnO_3", J. Appl. Phys. 106, 023916 (2009). [link]
  5 X. Hong, A. Posadas, K. Zou, C. H. Ahn, and J. Zhu, "High-mobility few-layer graphene field effect transistors fabricated on epitaxial ferroelectric gate oxides", Phys. Rev. Lett. 102, 136808 (2009). [link]
  6 J.-B Yau, X. Hong, A. Posadas, W. Gao, E. Altman, C. H. Ahn, Y. Bason, L. Klein, M. Sidorov, and Z. Krivokapic, "Anisotropic magnetoresistance in colossal magnetoresistive La_{1-x}Sr_xMnO_3 thin films", J. Appl. Phys. 102, 103901 (2007). [link]
  7 Y. Bason, L. Klein, H. Q. Wang, J. Hoffman, X. Hong, V. E. Henrich, and C. H. Ahn, "Planar Hall effect in epitaxial thin films of magnetite", J. Appl. Phys. 101, 09J507 (2007). [link]
  8 X. Hong, J.-B Yau, J. D. Hoffman, C. H. Ahn, Y. Bason, and L. Klein, "The effect of electric field doping on the anisotropic magnetoresistance of doped manganites", Phys. Rev. B 74, 174406 (2006). [link]
  9 Y. Bason, L. Klein, J.-B Yau, X. Hong, J. D. Hoffman, and C. H. Ahn, "Planar Hall effect magnetic random access memory", J. Appl. Phys. 99, 08R701 (2006). [link]
  10 T. C. Kaspar, T. Droubay, V. Shutthanandan, S. M. Heald, C. M. Wang, D. E. McCready, S. Thevuthasan, J. D. Bryan, D. R. Gamelin, A. J. Kellock, M. F. Toney, X. Hong, C. H. Ahn, "Ferromagnetism and structure of epitaxial Cr-doped anatase TiO_2 thin films", Phys. Rev. B 73, 155327 (2006). [link]

2001-2005

1 X. Hong, A. Posadas, and C. H. Ahn, "Examining the screening limit of field effect devices via the metal-insulator transition", Appl. Phys. Lett. 86, 142501 (2005). [link]
  2 Y. Bason, L. Klein, J.-B. Yau, X. Hong, and C. H. Ahn, "Giant planar Hall effect in colossal magnetoresistive La_{0.84}Sr_{0.16}MnO_3 thin films", Appl. Phys. Lett. 84, 2593 (2004). [link]
  3 X. Hong, F. Xiao, J. W. Reiner, A. Posadas, and C. H. Ahn, "Growth and characterization of La_{0.8}Sr_{0.2}MnO_3/Pb(Zr_{0.2}Ti_{0.8})O_3 /La_{0.8}Sr_{0.2}MnO_3 heterostructures for three-dimensional circuit studies", Annalen der Physik 13, 15 (2004). [link]
  4 X. Hong, A. Posadas, A. Lin, and C. H. Ahn, "Ferroelectric-field-induced tuning of magnetism in the colossal magnetoresistive oxide La_{1-x}Sr_xMnO_3", Phys. Rev. B 68, 134415 (2003). [link]
  5 A. Lin, X. Hong, V. Wood, A. A. Verevkin, C. H. Ahn, R. A. McKee, F. J. Walker, and E. D. Specht, "Epitaxial growth of Pb(Zr0.2Ti0.8)O3 on Si and its nanoscale piezoelectric properties", Appl. Phys. Lett. 78, 2034 (2001). [link]

Conference

1 Y. Bason, L. Klein, J.-B Yau, X. Hong, and C. H. Ahn, "Characterization of the magnetic anisotropy of La_{1-x}Sr_xMnO_3 using the planar Hall effect", Phys. Stat. Sol. C 1, 3336, (2004). [link]